Modeling of InGaN/GaAs Photovoltaic Tandem with GaAs/AlAs Bragg Mirror Rear Surface Reflector

Fayçal Bouzid, Nedjedia Benaziez

Abstract


In this work, a parametric study of a dual junction tandem based on In0.53Ga0.47N on GaAs has been carried. In order to obtain reflection of unabsorbed photons from the bottom of the device, Bragg reflectors (BR) composed of GaAs/AlAs, with appropriate thicknesses, was placed in the rear surface of the GaAs sub-cell. With this intention, the current-voltage curves are calculated for different front recombination velocities and the influence of the bottom cell thickness on efficiency has been studied. The results of simulation show that the structure’s efficiency can attain 29% under 1-sun AM1.5 illumination, for a front recombination velocity value of 1e3cm/s and 10µm bottom cell thickness. This efficiency will decrease with increasing the operating temperature.

Keywords


Bragg Reflector; Carrier Lifetimes; Recombination Velocity; Efficiency; Temperature.

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DOI (PDF): https://doi.org/10.20508/ijrer.v4i3.1636.g6400

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