Design and Analysis of Enhanced Boost Active Switch Controlled Based ZSI for Photovoltaic DG System

Abstract

This paper introduces a new topology for the applications in single stage photovoltaic distributed generation (PVDG) system. The proposed topology is named as Enhanced boost active switch controlled based Z-source Inverter (EBASC-ZSI). The EBASC-ZSI is capable of boosting the output voltage coming from photovoltaic panel with low value of shoot through state duty cycle (D). The EBASC-ZSI is compared with some of the topologies in the field of ZSI name as qZS, DA-qZSI and CA-qZSI. The EBASC-ZSI topology provides higher boosting voltage than DA-qZSI and qZS topology but similar boosting voltage like CA-qZSI topology at lower value of D. The EBASC-ZSI topology used a less pair of LC components but used one more switch in comparison to CA-qZSI. While in comparison to DA-qZSI topology, it has used a less inductor, an additional capacitor, same number of diodes and an additional switch in the Z-impedance. The capacitor voltage stress of EBASC-ZSI increases initially in comparison to CA-qZSI but decreases thereafter as the value of D increases. The current stress through one inductor of EBASC-ZSI is same in comparison to CA-qZSI and DA-qZSI. While the current stress through another inductor of EBASC-ZSI is less in comparison to CA-qZSI and DA-qZSI. The simulink model and the hardware prototype of the topology has developed in the laboratory and presented in this paper.